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| HS Code | 767066 |
| Chemical Name | Isopropyl Alcohol |
| Chemical Formula | (CH3)2CHOH |
| Cas Number | 67-63-0 |
| Molecular Weight | 60.10 g/mol |
| Grade | Electronic Grade |
| Purity | 99.99% min |
| Appearance | Clear, colorless liquid |
| Odor | Mild alcoholic |
| Boiling Point | 82.5 °C |
| Melting Point | -89 °C |
| Specific Gravity | 0.786 at 20 °C |
| Flash Point | 11.7 °C (closed cup) |
| Water Content | ≤ 0.01% (100 ppm) |
| Residue After Evaporation | ≤ 10 ppm |
| Solubility | Soluble in water and most organic solvents |
As an accredited Shiny Chemical Isopropyl Alcohol, Electronic Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Packaged in a 4-liter high-purity bottle, sealed for cleanliness, with four bottles per case for electronic-grade use. |
| Container Loading (20′ FCL) | 20′ FCL: Secure drums in container, block/brace, ventilate, ground against static, segregate from oxidizers, and label as electronic-grade IPA. |
| Shipping | Ship as UN1219, Isopropanol (Isopropyl Alcohol), Class 3, Packing Group II. Use grounded, sealed containers in ventilated, upright packages. Label flammable liquid, exclude ignition sources and oxidizers. Include leak-proof secondary containment and absorbent materials. Follow IMDG/IATA/DOT regulations and ensure proper documentation for sensitive electronic-grade purity. |
| Storage | Store Shiny Chemical Isopropyl Alcohol (Electronic Grade) in a tightly sealed, original container in a cool, dry, well-ventilated area. Keep away from heat, sparks, open flames, and strong oxidizers. Bond and ground containers during transfer. Prevent contamination by keeping the cap closed when not in use and storing upright. |
| Shelf Life | Shelf life is typically 2-3 years from manufacture date when stored unopened in a cool, dry, well-ventilated area. |
The application envelope for Shiny Chemical electronic-grade isopropanol (IPA) is defined by three measurable material properties: trace cation and anion burden, sub-0.5 µm particle loading, and water content after opening. These parameters, rather than generic solvent strength, dictate whether a downstream segment can use the material without yield loss. Table 1 aligns the commonly controlled properties with the analytical methods used in supplier lot release and in fab incoming inspection. The downstream scenarios below are limited to established industrial uses for electronic-grade IPA; no ancillary markets with unverified consumption patterns are included.
| Property | Test method | Typical control band |
|---|---|---|
| Assay | ASTM D770-11(2021) | 99.8% min |
| Water content | ASTM D1364 Karl Fischer | 0.05%–0.20% |
| Non-volatile residue | ASTM D1353 | ≤5 ppm |
| Critical cations | SEMI C19 ICP-MS | ≤10 ppb per element |
| Particles ≥0.5 µm | SEMI C19 optical particle counter | ≤25 counts/mL |
On a 300 mm copper/low-k line, post-chemical mechanical planarization cleaning removes ceria or fumed silica abrasive, benzotriazole from Cu surface passivation, and metal-ion residues before the wafer enters a low-pressure dry. Electronic-grade IPA functions not as a bulk stripper but as the final liquid-phase replacement solvent and as the vapor-phase agent that creates the Marangoni surface tension gradient required for pattern-safe drying. Water has a surface tension of 72.8 mN/m at 20°C; IPA reduces the meniscus surface tension to approximately 21.7 mN/m. Without that gradient, capillary forces at the drying meniscus exceed the mechanical strength of high-aspect-ratio lines and vias, producing pattern collapse at nodes below 5 nm logic and in >200:1 aspect-ratio 3D NAND structures. The process window is narrow: if the nitrogen carrier gas enters the drying chamber at 2–8 vol% IPA relative to gas flow, the meniscus withdrawal rate must be adjusted to the wafer pattern pitch. Insufficient IPA flow leaves an aqueous meniscus with high capillary stress, while excess IPA condenses on hydrophobic low-k sidewalls and leaves organic carbon residue. Compliance for this use is anchored to SEMI C19 current revision for electronic-grade IPA, ASTM D770-11(2021) for assay and water content, ASTM D1364 Karl Fischer moisture, ASTM D1353 non-volatile residue, and particle counting per the SEMI C19 optical particle counter method. In practice, manufacturers specify cation and anion levels at ≤10 ppb per element by ICP-MS for wafer-level cleaning; a single lot exceeding the limit on Na, Fe, or Al shifts gate leakage or metal contamination on the next process. The addition ratio in single-wafer spin cleaning is typically 70–100 vol% IPA in ultrapure water at 18.2 MΩ·cm resistivity, with a final rinse using undiluted IPA; batch immersion tools may run 60 vol% IPA during the organic residue step and then a neat IPA displacement rinse. The downstream production process consists of a post-CMP brush scrub using PVA brush heads, a dilute aqueous chemical clean for particle lift-off, a megasonic or spray rinse, a spin dispense of electronic-grade IPA, and an IPA/N2 Marangoni drying chamber. Process equipment includes enclosed single-wafer processors with per-wafer dispense manifolds, explosion-proof exhaust, and LEL sensors because the lower explosive limit of IPA is approximately 2 vol% in air and the flash point is approximately 12°C. Production-scale failure data from single-wafer drying tools show that water-rich IPA batches with water content above 0.2% produce circular water marks on SiCOH low-k films once spin speed falls below 1,200 rpm. The same tools record an increase in defect count when the IPA dispense temperature exceeds 35°C, because vaporization at the point-of-use creates unstable flow through the dispense nozzle. Published data for this exact configuration is limited; fabs calibrate flow rates against patterned wafer macros with aspect-ratio test structures rather than relying on a universal recipe. Terminal finished product types are logic wafers, DRAM and 3D NAND wafers, CMOS image sensor wafers, and wafer starts for contract foundry production below 10 nm design rules.
Wafer-level packaging lines with copper pillar bumps introduce a different residue profile: no-clean flux residues after solder bump reflow must be removed before underfill or molding, and the exact flux composition determines whether electronic-grade IPA alone reaches the cleanliness threshold. For rosin-based tacky flux, IPA dissolves abietic acid and solvent-soluble activators; for thermally cross-linked no-clean residues, IPA extraction alone may leave ionic species above the package reliability limit. Compliance is not solely chemical purity. Incoming IPA is monitored against SEMI C19 for metal ions, because Na and Cl carried into the bump surface can seed under-bump metallization corrosion. Package-level cleanliness is judged by IPC J-STD-001H residue limits and by IPC-TM-650 method 2.3.25 ROSE for ionic contamination, typically ≤1.56 µg/cm² NaCl equivalence for Class 3 hardware. Formulation addition ratio in single-wafer flux removal is 80–100 vol% IPA in ultrapure water; hot IPA at 30–40°C raises the solvency rate for rosin esters but narrows the safe handling envelope due to vapor accumulation. The downstream production process uses a spin processor with low-impact spray bars, cup drainage, and N2 purge. A rinse sequence removes bulk flux residue, a DI water step extracts chloride salts, and a final IPA displacement rinse dries the bump field without collapsing fine-pitch pillars. Equipment must be configured with full containment because the solvent is dispensed near hot wafer surfaces and must not be allowed to accumulate in the spin cup. An operational boundary is that IPA does not replace an aqueous saponifier for thermally aged flux. If no-clean flux is reflowed at peak temperatures between 245°C and 260°C, carboxylate residues may require alkaline aqueous spray; using IPA alone can leave patchy organic films that later cause underfill delamination. The resulting packaged hardware includes flip-chip CSP packages, copper pillar bumped wafers, 2.5D interposers, high-bandwidth memory stacks, and AI accelerator package substrates.
In flat-panel display manufacturing, electronic-grade IPA is consumed in two separate loops: incoming glass substrate surface preparation and fine metal mask cleaning during OLED evaporation. On the substrate line, IPA is used not as a standalone cleaner but as the final organic displacement solvent after detergent or alkaline cleaning; the typical addition ratio is 30–80 vol% IPA in deionized water through roll brushes, with the lower end used for initial glass wetting and the upper end used for pre-drying contact-angle reduction. In the fine metal mask loop, the material is used undiluted at 99.8% assay because shadow mask apertures can be as narrow as 20–50 µm and even a water stain or non-volatile residue can block source material during vacuum evaporation. Industry compliance for flat-panel processes references SEMI C19 for solvent purity, IEST-STD-CC1246D for product cleanliness level, and ISO 14644-1:2015 cleanroom classification; surface defect monitors on the glass line typically require defect counts below 0.1 particles/cm² at ≥1 µm after cleaning. The downstream production process for glass cleaning is a horizontal roll-brush tool with high-pressure spray rinse, air knife pre-dry, electronic-grade IPA spray, and a clean dry air or N2 final dry. Fine metal mask cleaning is an enclosed immersion or spray cabinet with point-of-use filtration at 0.1 µm absolute. Open immersion baths absorb water from ambient air; once water content exceeds 0.5%, the clean-dry step leaves edge stains on glass and fine metal mask surfaces. Terminal finished products are LCD modules, OLED panels, rigid-flex display stacks for mobile phones, automotive dashboard displays, and thin-film transistor backplanes.
Printed circuit board assembly consumes electronic-grade IPA on the printer line and in board rework. On stencil printers, automated under-stencil wipe modules dispense IPA onto lint-free polypropylene or nylon wipes; the solvent removes uncured solder paste from the stencil underside and aperture edges. With solder paste Type 6 for fine-pitch packages, aperture widths of 0.3 mm to 0.5 mm make incomplete stencil wipe visible as lower transfer efficiency and solder paste bridging. The formulation addition ratio for under-stencil cleaning is typically 70–100 vol% IPA in deionized water; high-density, high-speed lines use undiluted IPA because water slows solvent evaporation and may leave a thin paste emulsion film on the stencil. Compliance is set by IPC J-STD-001H for soldered electronic assemblies, IPC-TM-650 method 2.3.25 ROSE with a Class 3 threshold of ≤1.56 µg/cm² NaCl equivalent, and IPC-TM-650 method 2.6.3.3 for surface insulation resistance. The downstream process for misprinted boards consists of a solvent wipe or spray, a rinse step, and forced-air drying before paste reprint. For post-reflow flux cleaning, IPA is used in batch spray or vapor degreaser equipment; however, modern no-clean lead-free pastes leave polymerized residues that are not fully soluble in IPA alone. The production line must follow IPA with an aqueous saponifier or semi-aqueous cleaner where residues have been thermally crosslinked at reflow temperatures above 245°C. Failure to do so may yield ionic residues above the ROSE threshold, causing electrochemical migration in automotive ECU and server board service. Terminal finished product types are server motherboards, automotive engine control units, IoT sensor modules, and industrial programmable logic controller boards.
In hard-disk drive media and precision optical assembly, electronic-grade IPA is used where a single micrometer-sized particle, a water spot, or an adsorbed plasticizer can alter optical path or fly height. In hard-drive media manufacturing, aluminum or glass substrates are cleaned before sputtering of the magnetic layers; electronic-grade IPA functions as final solvent rinse because it does not leave non-volatile residue if water content is controlled. The formulation addition ratio is effectively 100 vol% IPA, not because of solvency limitations but because water in the final rinse forms calcium and magnesium carbonate spotting on heated substrate surfaces during the subsequent sputter preheat. For optical lens and prism cleaning, the same undiluted IPA is used in cleanroom wipes or low-energy ultrasonic baths with stainless steel mesh fixtures. Compliance anchors for this segment are SEMI C19 for solvent purity, ASTM D770-11(2021) for assay, IEST-STD-CC1246D for surface cleanliness levels, and ISO 14644-1:2015 for cleanroom controls. Downstream production process: substrate cleaning lines use a multi-stage detergent wash, DI rinse, electronic-grade IPA rinse, and heated N2 dry. Optical assembly lines use wipe-cleaning in a Class 5 cleanroom or a vapor degreaser modified for IPA. Operational boundary: electronic-grade IPA is not compatible with all optical polymers; PMMA and polycarbonate can craze or stress-crack when exposed to IPA. Glass, fused silica, and most AR-coated optics tolerate it. Finished device categories include hard-disk platters, optical lenses, prisms, fiber-optic connectors, and infrared sensor windows made from non-acrylic substrates.
Power module direct bond copper cleaning uses electronic-grade IPA on direct bond copper and insulated metal substrates after nickel/gold or nickel/silver plating and before aluminum wire bonding or silicone gel encapsulation. The solvent removes organic plating residues, fingerprint soils, and airborne hydrocarbons that would otherwise suppress ultrasonic wedge bond pull strength. The addition ratio in this segment is usually 100 vol% undiluted IPA for final rinse; a preceding aqueous cleaning step removes ionic contamination, and IPA displaces water from ceramic-copper interfaces. If a dilution is used, the ratio does not exceed 70:30 IPA:deionized water by volume because lower IPA content slows drying and leaves moisture in the edges of the ceramic substrate. Industry compliance for the power module assembly environment references SEMI C19 for solvent purity, ISO 14644-1:2015 for cleanroom controls, and MIL-STD-883 method 2011.9 for destructive wire bond pull testing as the functional cleanliness gate. The production process uses a low-power ultrasonic or spray cleaning step inside an explosion-proof enclosure, followed by warm N2 dry. Batch-to-batch variance in water content remains the primary process risk: water above 0.2% reduces the displacement drying efficiency at the ceramic-metal edge and can require extended N2 purge time. Published data for this specific configuration is limited, and process engineers qualify the cleaning line by wire bond pull force distributions on each substrate lot rather than relying solely on solvent COA values. Terminal assemblies include EV inverter power modules, industrial motor drives, IGBT and SiC MOSFET modules, and rail traction power modules.
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Shiny Chemical Industrial Co., Ltd. supplies an electronic-grade isopropyl alcohol under the product name Shiny Chemical Isopropyl Alcohol, Electronic Grade. The material is 2-propanol, CAS 67-63-0, with release specifications aligned to SEMI C21-type electronic solvent protocols. The grade is intended for semiconductor wafer drying, flat-panel display cleaning, photomask rinsing, hard disk drive component cleaning, and precision optics drying where sub-ppm non-volatile residue, trace metal control, and controlled particle burden are process-critical. The manufacturer does not assign an alphanumeric model suffix to this material in standard distributor listings; purchasing documentation identifies the solvent by grade name, lot number, and packaging code rather than a separate model designation. Packaging codes cover 1-gallon bottles, 5-gallon pails, 55-gallon drums, and 200-liter drums. The absence of a discrete model suffix reflects the use of a single electronic-grade specification across container formats.
The product is not interchangeable with USP-grade or industrial-grade isopropyl alcohol when particle-count and metal-ion release criteria are part of the acceptance protocol. Electronic-grade IPA is chemically the same solvent as other high-purity isopropanol grades, but the downstream purification, filtration, and packaging controls are different. The key differentiation is not solvency strength; it is the reduction of solvent-borne contaminants that remain after evaporation. That distinction becomes observable in spin-dry applications where non-volatile residue concentrates at the liquid drying front and can leave organic haze or sub-micrometer particles on oxide, nitride, and metal hardmask surfaces.
In front-end semiconductor cleaning, mobile metal ions such as sodium, potassium, calcium, iron, copper, and zinc are controlled because they can drift under electrical bias and degrade gate oxide reliability. Advanced process specifications frequently require final-cleaning solvent contributions to remain below 10 ppb for each critical metal, because surface metal contamination above 1×10¹⁰ atoms/cm² is associated with threshold voltage instability and reduced breakdown voltage in metal-oxide-semiconductor structures. Electronic-grade IPA addresses this by multi-stage purification and filtration; release documentation for this product class typically reports individual metal concentrations by inductively coupled plasma mass spectrometry after evaporation.
Production-scale immersion cleaner behavior shows that incoming solvent particle burden directly changes filter maintenance intervals. A solvent containing more than 25 particles/mL at size ≥ 0.5 μm accelerates differential pressure rise across 0.2 μm polytetrafluoroethylene membrane filters and increases the frequency of filter replacement in recirculating rinse tanks. Systems that maintain final rinse reservoirs at 20–25 °C under filtered nitrogen show lower moisture uptake than open atmospheric feed tanks. Batch-to-batch variation in electronic IPA is most commonly observed in water content and particle count after prolonged container storage; a partially used drum exposed to humid air can exceed the moisture specification, and point-of-use Karl Fischer verification after opening is standard practice in high-volume fabs.
The following table presents representative electronic-grade IPA release limits of the type used for lot acceptance. Individual lot certificates should be reviewed for exact values because customer-specific qualification may tighten or add parameters.
| Parameter | Acceptance limit | Test method |
|---|---|---|
| Assay as 2-propanol | ≥ 99.9 wt% | GC-FID per SEMI C21 |
| Water content | ≤ 0.10 wt% | Karl Fischer titration, ASTM D1364 |
| Color | ≤ 10 Pt-Co | ASTM D1209 |
| Acidity as acetic acid | ≤ 0.002 wt% | ASTM D1613 |
| Non-volatile residue | ≤ 5 ppm | ASTM D1353 |
| Density at 20 °C | 0.785–0.787 g/cm³ | ASTM D4052 |
| Particle count ≥ 0.5 μm | ≤ 25 particles/mL | Optical particle counter |
| Sodium, potassium, calcium, iron, copper, zinc | ≤ 10 ppb each | ICP-MS after evaporation |
| Chloride | ≤ 0.1 ppm | Ion chromatography |
| Sulfate | ≤ 0.2 ppm | Ion chromatography |
The water limit is not arbitrary. The 2-propanol-water azeotrope boils at approximately 80.4 °C at 87.9 wt% 2-propanol, which means conventional distillation cannot remove the final fraction of water without extractive distillation, molecular sieve drying, or equivalent dehydration. A moisture specification of ≤ 0.10 wt% prevents the solvent from contributing enough water to form residual droplets during spin drying. Non-volatile residue is controlled because any organic or inorganic material remaining after solvent evaporation is a defect source. The ASTM D1353 method uses evaporation in a platinum dish and reports gravimetric residue; a limit of ≤ 5 ppm reduces the probability of visible haze after air-knife drying or spin-off.
Physical property data assist in engineering the handling system. Isopropyl alcohol at 20 °C has a density of approximately 0.786 g/cm³, a normal boiling point of approximately 82.5 °C, a closed-cup flash point near 12 °C, and an autoignition temperature near 399 °C. Its surface tension is approximately 21.7 mN/m at 20 °C, which is substantially lower than the 72.8 mN/m surface tension of water. This difference is the physical basis for IPA-assisted drying. The surface tension gradient generated at a water-IPA meniscus drives liquid away from the substrate and reduces the formation of watermarks on hydrophilic films.
When electronic-grade IPA is substituted for reagent-grade or USP-grade material in a single-wafer spin processor, the process change is primarily chemical purity rather than solvency. The wafer enters the drying step after deionized water rinsing. IPA is either injected as vapor or delivered as liquid at the meniscus; because IPA has a lower surface tension than water, a surface tension gradient is created between the IPA-rich meniscus and the bulk water film. This gradient drives water away from the substrate and reduces the formation of drying stains on oxide, nitride, and metal hardmask films. The benefit is only realized if the IPA itself is free of non-volatile residue and particles; otherwise the drying front can leave particle defects or organic haze at the edge zone.
Process recipe volumes in single-wafer processors typically range from 0.5 L to 2.0 L per 300 mm wafer pass, depending on spin speed, nozzle geometry, and film-stack hydrophilicity. Lot-to-lot variation in water content above 0.15 wt% has been associated with increased watermark defect density in low-spin-speed edge-drying zones, although published data for this specific configuration is limited. On porous low-k dielectric films, vapor-phase drying is preferred where feasible because liquid intrusion into the porous matrix can create capillary stress damage. In these stacks, the low residue and low metal content of electronic-grade IPA reduce the secondary contamination contribution during the drying step, but the solvent does not eliminate pattern-collapse risk in high-aspect-ratio structures.
Flat-panel display cleaning lines use electronic-grade IPA as the final rinse after detergent and deionized water. In a typical in-line cleaner, glass substrates pass through an immersion or spray rinse module, an IPA rinse at 25–35 °C, and an air-knife dryer. The non-volatile residue limit of ≤ 5 ppm is important because the air knife leaves a thin evaporating film at the substrate edge; any non-volatile material concentrates in the final dry line and becomes visible as edge haze. The same mechanism applies to photomask cleaning, where the solvent is delivered through 0.1 μm point-of-use filters immediately before the mask surface. In these applications, reagent-grade IPA may have adequate bulk purity but is not routinely filtered to the same particle level, so it can produce sub-visible particulate contamination on high-contrast reticle surfaces.
Electronic-grade IPA is filled in high-density polyethylene or fluoropolymer-lined containers after cleanroom filtration. Common package sizes include 1-gallon bottles, 5-gallon pails, 55-gallon drums, and 200-liter drums. Bulk delivery into stainless steel or fluoropolymer-lined storage tanks is used at sites with high consumption. The product is flammable, with a closed-cup flash point of approximately 12 °C and an autoignition temperature of approximately 399 °C. Storage and transfer equipment should be grounded and bonded in accordance with NFPA 77 and NFPA 30. Transfer under filtered nitrogen or another dry inert gas is recommended when ambient relative humidity exceeds 60%, because anhydrous IPA absorbs water readily and can exceed moisture specification if left in open or partially open containers.
The solvent should not be combined with strong oxidizing agents such as concentrated hydrogen peroxide, nitric acid, or perchloric acid in closed systems because exothermic reactions may occur. Use of the product in sealed pressure systems above the autoignition temperature is prohibited. The operational boundary for moisture control is the primary storage risk; once a container is opened, repeated withdrawal cycles introduce humid air, and the moisture content can rise even when the bulk purity remains unchanged.
The following table summarizes the differentiation between electronic grade, USP grade, and industrial grade isopropyl alcohol. Values are representative commercial positions; vendor-specific release limits vary and should be checked against the certificate of analysis.
| Property | Electronic grade | USP grade | Industrial grade |
|---|---|---|---|
| Intended use | Semiconductor and precision cleaning | Pharmaceutical and cosmetic processing | General degreasing and formulation |
| Trace metal control | ≤ 10 ppb each for critical metals | Not specified | Not specified |
| Particle filtration | Point-of-use filtration to 0.1 μm or 0.2 μm | Not specified | Not specified |
| Water control | ≤ 0.10 wt% | Not specified for electronic use | Not specified |
| Non-volatile residue | ≤ 5 ppm | Monograph controlled | Not specified |
Substitution of USP-grade or industrial-grade IPA into semiconductor drying tools is not recommended without additional filtration, moisture verification, and trace metal qualification. Published data for Shiny Chemical’s exact particle-size distribution across all packaging formats is limited; user qualification under the specific dispense configuration remains required.
