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| HS Code | 134251 |
| Product Name | Tokuyama TOKUSOH Isopropyl Alcohol IPA SE for Electronic Manufacturing |
| Chemical Formula | C3H8O |
| Cas Number | 67-63-0 |
| Molecular Weight | 60.10 g/mol |
| Purity Assay | ≥99.8% |
| Appearance | Clear colorless liquid |
| Odor | Characteristic alcohol-like odor |
| Boiling Point | 82.5°C |
| Melting Point | -89.5°C |
| Flash Point | 12°C (closed cup) |
| Specific Gravity 20 20 C | 0.786 |
| Vapor Density | 2.07 (air=1) |
| Vapor Pressure 20 C | 4.4 kPa |
| Evaporation Rate | 1.7 (n-butyl acetate=1) |
| Solubility | Miscible with water, alcohols, ether, acetone, and chloroform |
| Water Content | ≤0.1% |
| Residue On Evaporation | ≤0.0003% |
| Refractive Index 20 C | 1.377 |
As an accredited Tokuyama TOKUSOH Isopropyl Alcohol IPA SE for Electronic Manufacturing factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Supplied in 18-litre metal cans, Tokuyama TOKUSOH Isopropyl Alcohol IPA SE is a high-purity solvent for electronics manufacturing. |
| Container Loading (20′ FCL) | 20′ FCL container loading of Tokuyama TOKUSOH IPA SE: secure drums/IBCs, stable palletization, proper labeling, and ventilation for safe electronic-grade chemical transport. |
| Shipping | Tokuyama TOKUSOH IPA SE is a high-purity isopropyl alcohol for electronics, shipped as a flammable liquid (UN 1219, Class 3, PG II). It is packaged in sealed, corrosion-resistant containers, labeled per regulations, and transported with proper grounding and ventilation. Keep away from ignition sources. |
| Storage | Store tightly sealed in the original container in a cool, dry, well-ventilated area away from heat, sparks, open flames, and strong oxidizers. Keep below 30°C and protect from direct sunlight. Use grounded containers to prevent static discharge. Ensure the area is equipped with proper fire suppression and spill containment, and avoid moisture contamination to maintain purity. |
| Shelf Life | Shelf life is typically 2–3 years when stored sealed, cool, and dry, away from ignition sources. |
On 300 mm copper damascene lines, the final rinse after post-chemical mechanical planarization controls post-CMP defect density. TOKUSOH IPA SE is metered into ultrapure water at 15–25 vol%. The blend reduces surface tension at the retreating drying meniscus. This suppresses pattern collapse in high-aspect-ratio trench structures. The wetting transition on hydrophobic low-k films is the critical process boundary. In a single-wafer spin processor, the dispense time is held at 20–40 s. Rinse temperature is controlled at 22 °C ± 2 °C. Megasonic agitation at 0.8–1.2 MHz detaches ceria slurry particles from copper line tops. The solution carries particles radially outward to the wafer edge. The SE grade is specified because cation residues from lower-purity IPA increase time-dependent dielectric breakdown risk in porous low-k dielectrics. Incoming solvent is tested for water content by ASTM D1364-17. Acidity is tested by ASTM D1613-17. Non-volatile residue is tested by ASTM D1353-13. The cleanroom environment is maintained to ISO 14644-1 Class 2. The terminal output is a cleaned copper/low-k wafer moving to post-CMP metrology and barrier-seed deposition.
The concentration window is not fixed across all devices. Published data for this specific configuration is limited because coater and cleaner recipes are proprietary. Below 10 vol%, meniscus control on hydrophobic CVD glasses may be incomplete. Above 30 vol%, the flash point margin in exhaust ducting is reduced. The blend ratio is adjusted with a mass-flow-controlled blending skid. No amine-based additives are introduced before the rinse. Amine residues decompose in downstream plasma-assisted deposition and alter photoresist footing. The solvent is hygroscopic. Storage in partially filled drums at relative humidity above 60% increases water content. This shifts the surface tension balance and may require re-qualification of the blend ratio. The product should not be mixed with concentrated nitric acid or heated hydrogen peroxide in closed waste lines because of peroxide formation and exothermic decomposition risk.
| Parameter | Representative production window | Test method / reference |
|---|---|---|
| IPA concentration in ultrapure water | 15–25 vol% | Correlated density per ASTM D4052-22 |
| Rinse temperature | 22 °C ± 2 °C | In-line RTD probe |
| Dispense duration | 20–40 s | Single-wafer spin processor recipe |
| Megasonic agitation | 0.8–1.2 MHz | Transducer calibration record |
| Water content of neat IPA | Lot-specific | ASTM D1364-17 |
| Non-volatile residue of neat IPA | Lot-specific | ASTM D1353-13 |
In coater/developer track modules, TOKUSOH IPA SE is dispensed through a dedicated edge bead removal nozzle and a separate backside rinse nozzle. The solvent dissolves the raised photoresist edge after spin coating. For ArF and KrF resists, neat IPA SE is delivered at 0.3–0.6 MPa nozzle back pressure. The dispense is synchronized to spin speed ramps of 900–1,200 rpm. This yields an edge exclusion width of 2–3 mm. The terminal product is a coated 300 mm wafer with a clean edge bead and backside. In immersion lithography, the backside rinse also removes resist fragments that could transfer to electrostatic chucks or the scanner exposure stage. The SE grade is controlled for trace acid and trace metal levels under semiconductor solvent specifications such as SEMI C21. This matters because chemically amplified resists are sensitive to acid diffusion and metal-induced dark film loss. The product must not be reclaimed from general solvent waste for this use. Solvent with unknown water content can leave a drying watermark at the edge. The exhaust and dispense system must be compatible with the 12 °C closed-cup flash point of neat isopropyl alcohol. Fire protection and ventilation are therefore designed to NFPA 30 and SEMI S2 equipment safety requirements. A final post-softbake edge inspection is performed with wafer edge defect metrology.
The process does not remove resist flakes that have already crosslinked on hot plates. A separate bake plate cleaning schedule is required. The solvent is not a replacement for backside scrubber steps on wafers with heavy backside particle loading. In those cases, a scrubber unit runs before the track, and IPA SE serves only as the final low-residue rinse.
For printed circuit board assembly, TOKUSOH IPA SE is used in spray-in-air batch cleaners after lead-free reflow soldering. The cleaning fluid is blended with 70–90 vol% IPA in deionised water. Some no-clean flux pastes require neat IPA to reduce white residue formation. Wash temperature is maintained at 40–50 °C in stainless-steel wash tanks. Spray manifold pressure is held at 0.2–0.4 MPa. This provides mechanical energy for under-component penetration. Terminal assemblies include BGA, QFN, and 01005 passive packages. Ionic cleanliness is verified by resistivity of solvent extract per IPC-TM-650 2.3.25. Acceptance is below 1.56 µg/cm² NaCl equivalent per J-STD-001F. Assemblies with moisture-sensitive labels receive a post-wash bake at 60–80 °C for 1–2 h. The solvent does not remove fully cured no-clean flux residues. Published data for this specific configuration is limited for closed-loop spray systems using high-boiling solvent blends. To prevent flash point accumulation in the wash cabinet, ventilation and lower explosive limit monitoring are required. The closed-cup flash point of neat IPA is 12 °C per ASTM D56. The wash chamber is interlocked with a solvent concentration monitor. The solvent is not a replacement for saponifier-based cleaning of rosin fluxes that require saponification before aqueous rinsing.
| Acceptance parameter | Production limit | Reference / test method |
|---|---|---|
| Ionic cleanliness | ≤ 1.56 µg/cm² NaCl equivalent | IPC-TM-650 2.3.25 |
| Surface insulation resistance | Lot-specific acceptance | IPC-TM-650 2.6.3.7 |
| Visual cleanliness | No visible residue | IPC-A-610 Class 2/3 inspection criteria |
| Flash point of neat IPA | 12 °C closed cup | ASTM D56 |
The final rinse before indium tin oxide sputtering on OLED backplane glass controls anode adhesion and dark-spot occurrence. TOKUSOH IPA SE is applied in a low-impact ultrasonic rinse followed by an ultrapure water cascade. The glass passes through a cleanroom environment of ISO 14644-1 Class 3. Typical rinse bath concentration is 20–40 vol% IPA in ultrapure water. The bath temperature is held at 35–45 °C. Residence time in the final bath is 5–8 min for 0.5 mm glass substrates. This removes glass cutting debris, finger oils, and ion residues. These contaminants would otherwise create local anode heterogeneities after ITO sputtering. After the rinse, heated nitrogen at 60–80 °C removes the residual water film. The terminal product is a cleaned glass carrier ready for ITO sputter equipment. For polyimide-based flexible OLED substrates, the same bath is adapted at lower temperature to limit dimensional change. The SE grade is selected because evaporation residue directly affects the surface contact angle for photoresist coating. No amine-based glass cleaners are added because subsequent sputter chambers are sensitive to outgassing. The bath is refreshed on a conductivity setpoint control rather than a fixed time interval. Published data for this specific configuration is limited for high-speed Gen 6 sheet handling lines.
In SMT stencil printing, understencil wipe rolls are wetted with TOKUSOH IPA SE either neat or as a 50–70 vol% aqueous mixture. The solvent removes solder paste from apertures after each print stroke. Wipe frequency is set to once per 2–5 boards depending on aperture pitch. Vacuum-assisted dry wipe follows each wet pass. This prevents paste smearing on the board side. The terminal product is a cleaned stainless steel stencil with no paste blocking in 0201 or micro-BGA apertures. Understencil wipe pressure of 0.1–0.3 MPa is typical on pneumatic stencil printers. Low water content prevents water-washable solder paste from crusting inside apertures. The solvent is not a substitute for periodic aperture brushing with proprietary understencil cleaners. The low residual solvent film prevents flux dilution on the first print after cleaning. Published data for this specific configuration is limited because wipe solvent choice is validated per solder paste supplier.
Cavity and lens barrel cleaning for laser diode and optical transceiver assembly uses TOKUSOH IPA SE as a low-residue final solvent. The solvent is applied by cleanroom swab or PTFE spray nozzle. It removes machining oils, fiber polish debris, and packaging adhesives. Neat IPA SE is used at 25 °C ± 3 °C with a contact time of 15–30 s. Dried nitrogen blow-off follows immediately. The terminal products are InP-based laser diode sub-assemblies, LC receptacles, and micro-optical housings. The SE grade is selected for low non-volatile residue measured by ASTM D1353-13. Optoelectronic packaging lines typically require lot-specific non-volatile residue below 5 ppm. After cleaning, the surface is not rinsed with water. Mineral residues in water would remain after evaporation. The cleaned surface is moved into adhesive bonding without delay to avoid recontamination. The process does not fully remove silicone mold release. A preceding hydrocarbon solvent wipe is required for mold release removal. The solvent is stored in PTFE-lined containers to maintain low extractables.
Before thermal interface material dispensing, nickel-plated copper heat spreader lids and ceramic substrates are cleaned with TOKUSOH IPA SE in ultrasonic immersion. The solvent is used neat at 40–50 °C for 3–5 min. It removes stamping oils, fingerprint salts, and tape residues. These contaminants impair TIM wetting. Terminal products are CPU lids, IGBT baseplates, and power module substrates. Following immersion, parts are blow-dried with filtered nitrogen and held in a cleanroom. The SE grade is used to avoid chloride contamination that can initiate galvanic corrosion at the lid-edge seal. The cleaned surface is checked to be water break-free after drying. Non-volatile residue is monitored per ASTM D1353-13. The ultrasonic tank is equipped with a lid and vapor control. The tank is electrically grounded and the room ventilation is interlocked to the lower explosive limit. The process is not suitable for pre-cleaning soft polymeric gap pads. Those materials absorb solvent and swell. Published data for this specific configuration is limited for soldering flux on pre-sealed power modules.
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The product designated Tokuyama TOKUSOH Isopropyl Alcohol IPA SE is a high-purity isopropyl alcohol supplied for electronic manufacturing environments where trace ionic contamination, particle burden, and non-volatile residue must be controlled below general industrial limits. The molecular formula is C3H8O, the molar mass is 60.10 g mol−1, and the CAS registry number is 67-63-0. At 20 °C, the liquid density is approximately 0.785 g cm−3, the vapor pressure is approximately 4.4 kPa, and the closed-cup flash point is approximately 12 °C. The boiling point at standard atmospheric pressure is 82.5 °C, and the autoignition temperature is approximately 399 °C. In electronic manufacturing, the SE grade is used for wafer drying, precision surface preparation, under-stencil cleaning, and removal of low-polarity residues from process tooling. The product is differentiated from general-purpose IPA by the specification envelope for metal cations, anions, water content, and sub-0.1 µm particle counts, which is aligned with semiconductor and printed circuit assembly cleanliness requirements.
The difference is defined by the cumulative trace impurity budget rather than by the solvent chemistry alone. Technical-grade IPA may contain water above 0.2%, non-volatile residue above 10 ppm, and variable alkali metal burdens that make it unsuitable for direct contact with high-aspect-ratio interconnect features. In contrast, electronic SE grade material is controlled for particles at 0.1 µm and larger, with liquid particle counter data from electronics-grade filling lines commonly reporting counts below 10 particles/mL; the lot certificate provides the acceptance limit. The solvent is also packaged to restrict sodium, potassium, calcium, iron, chloride, and sulfate. In incoming quality control, semiconductor fabs use inductively coupled plasma mass spectrometry, ion chromatography, and laser particle counting to verify these parameters. The difference is not limited to a single impurity class: low water alone does not guarantee electrical compatibility, and low particle count alone does not prevent alkali metal contamination. The table below compares the three solvent categories.
| Parameter | Technical-grade IPA | Reagent-grade IPA | TOKUSOH IPA SE |
|---|---|---|---|
| Assay by GC area normalization | ≥99.0% | ≥99.5% | Lot CoA; commonly ≥99.8% |
| Water | ≤0.2% | ≤0.1% | Lot CoA; controlled under SEMI C21 |
| Non-volatile residue | ≤10 ppm | ≤5 ppm | Lot CoA; electronic-grade limits |
| Particles ≥0.1 µm | Not controlled | Not controlled | Controlled by liquid particle counting |
| Typical packaging | Bulk drum | Amber bottle | Cleanroom-compatible container |
A receiving inspection protocol for Tokuyama TOKUSOH IPA SE generally includes gas chromatography-flame ionization detection for assay, Karl Fischer coulometric titration for water, evaporation residue gravimetry for non-volatile residue, and optical particle counting after bottle fill. The SE grade is commonly controlled to an assay not less than 99.8% by GC area normalization, with water below 0.1% in sealed cleanroom containers; however, the supplier’s lot-specific certificate of analysis is the authoritative document. The analytical methods used for electronic-grade IPA are listed in the table below. Process engineers should verify that the solvent does not encounter strong oxidizing agents such as concentrated nitric acid or hydrogen peroxide at elevated temperature because exothermic decomposition can occur under adiabatic upset conditions. In addition, materials of construction for sampling lines should be fluoropolymer or stainless steel because plasticized PVC can release phthalates that appear as non-volatile residue spikes.
| Property | Test method | Reason for electronic manufacturing control |
|---|---|---|
| Assay | GC-FID internal normalization | Controls water and high-boiling organic interference |
| Water | Karl Fischer coulometric titration | Water affects drying and hydrolysis reactions |
| Particles ≥0.1 µm | Laser light extinction liquid particle counting | Particle count relates to pattern defect density |
| Trace metals | ICP-MS after evaporation | Na, K, Ca, Fe shift electrical parameters |
| Anions | Ion chromatography | Chloride and sulfate drive corrosion |
| Non-volatile residue | Evaporation gravimetry | NVR leaves films on optical surfaces and stencils |
Surface preparation processes in semiconductor manufacturing use isopropyl alcohol for final rinse and drying after aqueous cleaning. In immersion or spin-on-dispense tools, the low surface tension of IPA relative to water, reported as approximately 23 mN m−1 at 20 °C, allows the solvent to penetrate high-aspect-ratio trenches and suppress watermark formation. For patterned wafers with sub-10 nm features, vapor-phase IPA drying is used because the Marangoni gradient reduces liquid meniscus recondensation. Tool fill stations require the solvent to be filtered through point-of-use cartridges rated at 0.05 µm or 0.1 µm to remove particles introduced during container connection. The SE grade is specified in this application because residual metal cations from lower-purity material can diffuse into gate oxide interfaces or charge-trap regions during subsequent thermal processing. Particle and trace metal methods in the table above are used to confirm that the solvent remains within the lot-specific acceptance band. Published data for a specific wafer defect rate tied to each lot of this particular SE grade is limited; therefore, fabs rely on internal split-lot testing and monitor particle counts at the point of use.
In printed circuit assembly, TOKUSOH IPA SE is introduced at the under-stencil wipe station and at post-reflow defluxing modules. Automated stencil cleaning systems apply the solvent through a spray bar set at pressures between 0.2 MPa and 0.5 MPa to remove type 3 and type 4 solder paste residues from laser-cut apertures. The relative evaporation rate is approximately 2.0 when n-butyl acetate is assigned a value of 1.0, permitting rapid drying without leaving sufficient liquid residence time for rosin re-deposition on the stencil underside. Inline defluxers using neat IPA are less common for highly polymerized no-clean flux residues because neat IPA has limited solvency for thermally crosslinked rosin; however, the material is used as a final rinse after saponifier or co-solvent wash. Residue testing after cleaning is performed by ionic contamination measurement such as ROSE testing under IPC-TM-650 2.3.25. In high-density ball-grid-array assemblies with 0.4 mm pitch, retained solvent anionic residue must be below 1.56 µg cm−2 NaCl equivalence for many OEM cleanliness specifications; the final rinse with low-anion IPA SE contributes to meeting that threshold only when upstream saponifier removal is complete.
Beyond semiconductor and printed circuit applications, the solvent is used in flat-panel display manufacturing to clean glass substrates before photoresist coating. The same low-NVR and particle requirements apply because residual particles create photolithographic defects after exposure. In photomask cleaning, the solvent is used as a final organic rinse after aqueous megasonic cleaning; the absence of alkali metals and sulfate helps prevent haze formation during mask storage.
Storage and dispense conditions influence particle and water claims. Containers are typically high-density polyethylene or glass-lined steel drums with nitrogen blanketing; once opened, the solvent must be transferred using stainless steel or fluoropolymer wetted components. Data from chemical distribution systems indicate that water uptake in an open drum at 40% RH and 23 °C can exceed 0.03% within 24 h due to hygroscopic absorption and headspace ventilation. Closed-loop dispense systems using pressurized nitrogen and membrane dryers reduce this shift to below 0.005% over a 7-day production campaign. The SE grade is classified as a flammable liquid under NFPA 30 and requires segregation from strong oxidizers; local fire code governs cabinet storage limits. Unused material from a container should not be returned to the original drum because this practice can transfer particle and water contamination from the point-of-use line back into the bulk supply. Drum pumps should use static-dissipative wetted parts and grounding to limit charge accumulation during transfer.
When the solvent is used in direct contact with integrated circuit wafers after gate formation, sodium and potassium limits become process-critical. In such applications, an incoming lot with total alkali metals above 10 ppb may be rejected even when the assay meets 99.9%. Tokuyama TOKUSOH IPA SE is therefore treated as a low-metal electronic solvent, distinct from pharmaceutical or general analytical reagent IPA, where sodium specifications may be quoted only in the 1 ppm to 10 ppm range. Compared with high-purity IPA grades that are optimized only for low water or low acidity, the SE designation emphasizes simultaneous control of cations, anions, particles, and non-volatile residue. Users that require sub-1 ppb metal levels must install point-of-use purification, because no packaged solvent is guaranteed to maintain sub-1 ppb metal content after container transfer. The specification hierarchy therefore depends on the device geometry: for relaxed-node analog devices, a 100 ppb total metal specification may be acceptable, while for advanced-node logic, point-of-use purification becomes mandatory irrespective of the initial solvent grade.
Compatibility with equipment materials should be evaluated under both static and flow conditions. The solvent has a Hansen solubility parameter dispersion component of approximately 15.8 MPa1/2 and a polar component of approximately 6.1 MPa1/2, which govern swelling of elastomeric seals. Perfluoroelastomer and PTFE are preferred over EPDM and silicone for wetted seals in diaphragm pumps and spray nozzles. In controlled tests, EPDM exposed to liquid IPA at 40 °C for 72 h shows mass uptake and extractable release that can exceed electronic-grade cleanliness budgets. The product is therefore dispensed through stainless steel lines with electropolished inner surfaces of 0.25 µm Ra or better, with point-of-use filtration. The material is not intended for use with strong oxidizing acids, and waste streams containing IPA must be handled according to hazardous waste regulations for flammable solvents. Distillation or solvent recycling of IPA SE from electronic manufacturing tools is not recommended unless the reclamation system includes particle filtration and ionic polishing; otherwise, recycled solvent may not retain the low-metal specifications of the virgin product.
