Products
| HS Code | 885129 |
| Product Name | 99.9% Electronic Grade Isopropyl Alcohol |
| Chemical Formula | C3H8O |
| Molecular Weight | 60.10 g/mol |
| Purity | 99.9% minimum |
| Appearance | Clear liquid |
| Color | Colorless |
| Odor | Characteristic alcohol odor |
| Specific Gravity 20 C | 0.785 - 0.786 |
| Boiling Point | 82.5 °C |
| Melting Point | -88.5 °C |
| Flash Point | 11.7 °C (closed cup) |
| Refractive Index 20 C | 1.3776 |
| Water Content | < 0.01% |
| Residue On Evaporation | < 1 ppm |
| Electrical Conductivity | Low |
As an accredited 99.9% Electronic Grade Isopropyl Alcohol factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Packaged in a 1L airtight HDPE bottle with tamper-evident seal, ensuring purity and safe handling for electronics cleaning. |
| Container Loading (20′ FCL) | 20′ FCL loaded with 99.9% Electronic Grade Isopropyl Alcohol, secured in drums/pails, labeled flammable, ventilated and safely stowed. |
| Shipping | Ship as UN1219, Isopropanol (Isopropyl Alcohol), Class 3, Packing Group II. Use approved steel drums or IBCs grounded and bonded. Affix flammable liquid and hazardous material labels. Include documentation, emergency response information, and segregation from oxidizers. Ensure purity verification and chemical compatibility before dispatch. |
| Storage | Store 99.9% Electronic Grade Isopropyl Alcohol in a tightly sealed, clean container made of compatible materials, ideally stainless steel or glass. Keep in a cool, dry, well-ventilated area away from heat, ignition sources, and direct sunlight. Prevent moisture contamination, and use proper grounding to avoid static discharge. |
| Shelf Life | Shelf life is typically 2-3 years from manufacture date when stored unopened in original, tightly sealed containers away from heat and moisture. |
In semiconductor fabrication, 99.9% electronic-grade isopropyl alcohol is specified at the point where aqueous cleaning chemistry must be removed without leaving watermarks or non-volatile residue on patterned wafers. The solvent is used undiluted at an addition ratio of 100 wt% in single-wafer spin processors and batch Marangoni dryers; a typical 300 mm single-wafer recipe dispenses 0.8–2.0 mL per wafer pass through a stainless steel dispense nozzle, while batch immersion systems maintain IPA vapor concentration at 60–80 °C under nitrogen carrier flow of 10–20 standard liters per minute. Compliance is governed by SEMI C18-0301 for low-water electronic-grade isopropyl alcohol and by ASTM D512-23 for chloride measurement when incoming solvent lots are released against a purchase specification. In production wet benches, the Marangoni effect pulls deionized water from the wafer surface as IPA vapor condenses into the meniscus; the critical window is narrow because vapor temperature below 55 °C leaves residual moisture on hydrophilic silicon oxide and polysilicon surfaces, while temperatures above 85 °C increase evaporation rate, static charge accumulation, and flammability hazard inside the enclosure. Batch-to-batch variance in water content is the most common failure mode: technical-grade material with water above 0.1% increases watermark defects on silicon oxide, so end users monitor moisture by Karl Fischer titration and non-volatile residue by ASTM D1353-13(2021) on every drum before loading into the chemical distribution system.
The downstream process of record for front-end wafer drying includes a deionized water rinse, a slow withdrawal through an IPA vapor zone, and a nitrogen drying stage. The wafer cassette is lifted at 0.5–3.0 mm/s while IPA vapor is discharged from a heated bubbler; water is displaced at the meniscus, and the low surface tension of IPA prevents collapse of high-aspect-ratio structures during drying. On single-wafer tools, the solvent is dispensed onto the wafer center while spin speed is ramped from 300 rpm to 1,200 rpm, depending on feature geometry and film stack hydrophobicity. Equipment includes wet benches with integrated rinse-solvent-etch modules, single-wafer spin processors, and nitrogen-purged solvent cabinets. The solvent is also used in edge-bead removal where photoresist accumulates at the wafer edge; it dissolves uncured photoresist and eliminates a bead before wafer edge exposure. Terminal finished product types include sub-5 nm logic SoC wafers, DRAM and 3D NAND memory, power MOSFET wafers, CMOS image sensor wafers, and MEMS microphone wafers. An operational boundary should be observed: electronic-grade IPA is not a substitute for plasma ashing of fully cross-linked photoresist, and exposed aluminum pad surfaces should be dried immediately after IPA contact to avoid galvanic staining from trace water.
In high-density printed circuit board assembly lines where stencil apertures drop below 0.3 mm pitch and micro-BGA footprints exceed 0.4 mm pitch, technical-grade isopropyl alcohol is rarely acceptable because chloride and non-volatile residues are electrochemically incompatible with no-clean flux residues and impedance-controlled boards. The electronic-grade material is charged into closed-loop stencil cleaning systems at an addition ratio of 100 vol% as the primary solvent, or as a 90:10 v/v IPA/deionized water blend when water-soluble flux residues are present; a typical sump charge is 4–8 L and spray pressure is maintained at 0.3–0.7 MPa with liquid temperature held at 35–45 °C. The governing compliance matrix includes IPC TM-650 method 2.3.25 for ionic cleanliness, IPC J-STD-001H for soldered electrical and electronic assemblies, and IPC-A-610H for flux residue acceptance. In production-scale stencil cleaners, the solvent is jetted through fan nozzles onto laser-cut stencils with aperture aspect ratios of 0.45–0.75; the cleaning cycle lasts 2–6 minutes per side, and batch-to-batch residue variance is measured by resistivity of solvent extract in a ROSE tester.
The downstream application includes post-print stencil cleaning, post-reflow misprint cleaning, and selective cleaning of gold finger contacts before wire bonding. A solvent pump draws from a sealed reservoir and discharges through stainless steel spray bars inside an explosion-proof enclosure compliant with NFPA 30 and local Class I Division 2 electrical classification; the low flash point of IPA, approximately 12 °C, makes closed-loop ventilation and solvent vapor monitoring mandatory. The process removes rosin, synthetic no-clean, and water-soluble solder pastes, but it is not suited for fully cured epoxy-based solder mask strippers or conformal coatings. Terminal finished product types include automotive engine control units, server motherboards, radio frequency modules for 5G small cells, and wearable medical PCB assemblies. The main limitation is solvent evaporation causing batch composition drift in 90:10 water blends; daily refractive index checks maintain the blend ratio within ±2%.
In fiber-optic connector production and optical transceiver assembly, 99.9% electronic-grade IPA is dispensed as a neat cleaning solvent at an addition ratio of 100% and applied in volumes of 0.05–0.15 mL per connector end face, either from a pump bottle onto a polyester lint-free swab or inside a cassette-based reel cleaner. The governing standard is IEC 61300-3-35, which classifies end-face defects by core, cladding, and contact zones; material specification should also reference Telcordia GR-326-CORE for single-mode connector reliability. A wet cleaning process begins with visual inspection on an interferometer to map scratches and pits; then a swab saturated with electronic-grade IPA is drawn across the ferrule end face in a single direction with 2–4 passes, followed by a dry swab. The solvent removes buffer gel, fingerprint oil, and hygroscopic particulate without attacking zirconia ferrules or epoxy in the connector housing. Excess solvent is a process risk because liquid migration into the ferrule bore increases attenuation and back-reflection, causing return loss degradation below -40 dB.
In active alignment lines for optical transceivers, the IPA is used to clean fiber array units and planar lightwave circuit chips before UV-curing of index-matching adhesive. The production equipment includes automated end-face cleaning stations, reel-to-reel cleaning cassettes, and nitrogen blow-off nozzles; typical cleaning time per connector is 5–12 seconds. An operational boundary is that electronic-grade IPA does not remove cured epoxy or carbonized contamination, and not all polymer optical fibers are compatible; PMMA-based fiber should not be cleaned with IPA due to stress crazing. Terminal finished product types include LC/SC/FC patch cords, MPO/MTP multi-fiber push-on connectors, active optical cables, optical transceiver modules for data centers, and fiber array units for co-packaged optics.
Precision optics fabrication imposes a non-volatile residue budget of less than 5 ppm on final cleaning solvents because any residue on a fused silica or optical glass surface becomes a nucleation site for electron-beam evaporation or ion-assisted deposition. Electronic-grade IPA at 99.9% is used undiluted at an addition ratio of 100%, typically 1–2 mL per 50 mm lens element, in an ultrasonic bath operating at 40 kHz and 45 °C for 5–10 minutes, followed by vapor degrease or drag-wipe drying. Compliance for surface quality is expressed through ISO 10110-7 for surface imperfections and MIL-PRF-13830B for scratch-dig designation; process validation uses non-volatile residue testing via ASTM D1353-13(2021) and ISO 14644-1 cleanroom classifications. On the production line, polished lenses are loaded into stainless steel mesh baskets, immersed in a bath charged with 99.9% electronic-grade IPA, and agitated to remove polishing compound, pitch, and light machine oil before anti-reflection coating. Because technical-grade IPA can contain chloride and alkali metal ions that affect laser damage threshold, the electronic grade is preferred for high-power laser optics and deep-ultraviolet components. A process conflict exists with acrylic and some polycarbonate optical elements: IPA causes stress crazing and should not be used unless a controlled compatibility test has been performed on the specific polymer grade.
The downstream production process continues with ionized nitrogen blow-off, dark-field microscope inspection, and vacuum deposition of dielectric multilayers. Terminal finished product types include aspheric camera lenses, augmented-reality waveguide molds, projection prisms, high-power laser diode windows, and telecom micro-optics. On high-volume lines, evaporation losses can reach 0.5–1.0 L per shift from open baths; closed-loop solvent recovery and daily density checks keep water content below 0.1%. Electronic-grade IPA is also applied by cleanroom wipes to remove fingerprints before final assembly of lens stacks, but it does not remove silicone-based mold release agents and should be followed by vacuum plasma cleaning when silicone contamination is suspected.
In flat-panel display fabrication, 99.9% electronic-grade isopropyl alcohol is delivered through an air-knife cleaning line to remove sub-10 µm particles, polyimide varnish residue, and human fingerprint lipids from ITO-coated glass and bare glass substrates. The addition ratio is 100 vol%, with process dosing of 0.2–0.5 L/min per meter of substrate width and air-knife pressure of 0.3–0.6 MPa; the substrate is conveyed at 2–5 m/min through a Class 5 cleanroom. Compliance references ISO 14644-1 for airborne particulate control and SEMI S2 for equipment safety; upstream material release follows SEMI C18-0301. The solvent reduces contact angle hysteresis on ITO after aqueous detergent cleaning and prevents re-deposition of particles during final blow-off. In OLED and micro-LED lines, the process is positioned before organic vapor deposition or photoresist coating, never after the organic emitter layer is deposited, because the solvent would dissolve low-molecular-weight hole transport materials and cause dark spot formation. A critical threshold is the evaporation rate: at conveyor speeds above 5 m/min, the liquid film does not fully evaporate before the substrate enters the next station, leading to drying stains visible under oblique illumination as mura.
Typical downstream equipment includes vertical inline cleaners with multiple air knives, ultrasonic pre-cleaning tanks, and deionized water rinses; the electronic-grade IPA is supplied from a pressurized stainless steel canister and filtered through 0.05 µm PTFE membranes to remove particles before the air knife. The process is specialized for particle removal and organic film treatment but is not a substitute for photomask cleaning or for post-deposition cleaning of OLED thin-film encapsulation surfaces. Terminal finished product types include smartphone OLED panels, automotive dashboard TFT-LCD displays, micro-LED display tiles, and touch sensor glass. Batch-to-batch water content and non-volatile residue are controlled by refractometry and evaporation tests because water content above 0.1% can leave droplet marks on indium tin oxide surfaces after air-knife drying.
In electrochemical biosensor manufacturing, 99.9% electronic-grade IPA is used neat at an addition ratio of 100% and a dosage of 0.5–2.0 µL per 20 mm² screen-printed electrode, applied by an automated micro-dispensing head to remove printing oil, surfactant, and loose carbon paste before the deposition of glucose oxidase, lactate oxidase, or aptamer capture layers. The compliance matrix includes ISO 13485:2016 for medical device quality management, FDA 21 CFR 820 for quality system regulation, and ISO 10993-1 for biological evaluation when residual solvent levels are assessed; because IPA is a manufacturing solvent and not a component of the final device, residual testing is performed by headspace gas chromatography with a limit commonly set below 50 µg per device. The reasoning for electronic grade rather than technical grade is chloride contamination: chloride ions at parts-per-million levels alter the Ag/AgCl reference electrode potential and increase lot-to-lot calibration drift. In reel-to-reel production, printed electrodes on polyester or polyimide webs pass under a solvent jet, then through a drying tunnel at 60–70 °C with filtered air flow of 0.5–1.0 m/s.
The downstream process continues with oxygen plasma activation or UV-ozone treatment, followed by enzyme immobilization and assembly into laminated test strips or cartridge housings. Electronic-grade IPA removes hydrophobic ink residues and improves wetting of aqueous enzyme solution on carbon electrodes, but it is not used on assembled implantable sensors because residual alcohol can denature immobilized proteins and alter membrane permeability. Terminal finished product types include glucose test strips, point-of-care creatinine cartridges, electrochemical aptasensor chips, and wearable sweat analyte monitors. A specific limitation arises with silver-free carbon reference electrodes: the absence of chloride is still critical because trace chloride in technical-grade solvent can form silver chloride if silver is present in adjacent contact traces, leading to reference drift, so only SEMI C18-released electronic grade is purchased for this application.
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Product designation IP-EL-99.9 is a 99.9% electronic grade isopropyl alcohol with CAS 67-63-0 and molecular weight 60.10 g/mol. It is supplied in packaging variants IP-EL-99.9-1L-FEP, IP-EL-99.9-4L-FEP, IP-EL-99.9-20L-PTFE, and IP-EL-99.9-200L-HDPE-DV. The product is filtered at 0.1 µm during packaging and is specified for ISO Class 5 or cleaner wafer fabrication environments. Table 1 lists the typical release specification. Each production lot is assigned a unique certificate of analysis that reports assay, water content, nonvolatile residue, chloride, sulfate, acidity, metals, and particle count against the specified upper and lower control limits.
| Parameter | Specified limit | Reference method |
|---|---|---|
| Assay, isopropanol | ≥99.9% by GC area | GC-FID, internal area percent |
| Water | ≤100 mg/kg | ASTM E203 |
| Residue after evaporation | ≤5 mg/kg | ASTM D1353 |
| Acidity/alkalinity | ≤0.0005 meq/g | ASTM D1613 |
| Chloride | ≤0.1 mg/kg | Ion chromatography, ASTM D4327 adapted |
| Sulfate | ≤0.2 mg/kg | Ion chromatography, ASTM D4327 adapted |
| Total metals | ≤50 µg/kg | ICP-MS after preconcentration |
| Individual metals, each | ≤10 µg/kg | ICP-MS after preconcentration |
| Particle count, ≥0.5 µm | ≤25 particles/mL | Light-scattering particle counter calibrated to ISO 11171 |
| Density at 25 °C | 0.785–0.786 g/mL | ASTM D4052 |
| Color | ≤10 APHA | ASTM D1209 |
Lot release for each packaging variant is performed after the product has been recirculated through the filling skid for at least 15 min to reduce dead-volume heterogeneity. For a 200 L drum, samples are drawn from the top, middle, and bottom after recirculation; a single sample above the water or metal control limit triggers quarantine of the entire lot. The evaporation residue test uses a platinum dish conditioned at 105 °C for 30 min and a microbalance with 0.01 mg readability. Calibration of the GC-FID assay is performed against a certified reference material with 99.9% purity, and the Karl Fischer water response is checked against NIST-traceable water standards. The product does not contain substances above the REACH Candidate List threshold of 0.1% w/w and falls outside RoHS Directive 2011/65/EU scope as a process chemical removed during subsequent cleaning and drying.
In incoming inspection of semiconductor-grade IPA, three classes of contaminants dominate lot rejection: water, metallic ions, and nonvolatile residues. Water above 100 mg/kg shifts the vapor-liquid equilibrium of the IPA-water system and can leave water marks on hydrophobic wafer surfaces after Marangoni drying. Metallic ions such as sodium, potassium, iron, copper, calcium, and zinc are measured by ICP-MS after preconcentration; individual concentrations are controlled to ≤10 µg/kg and total metals to ≤50 µg/kg. Nonvolatile residue is determined by evaporation to dryness at 105 °C and is limited to ≤5 mg/kg. Technical-grade IPA may contain water in the g/kg range and metal burdens that exceed front-end limits by orders of magnitude. USP IPA is controlled to pharmacopeial identity and residue monographs, but its trace metal and particle-count specifications are not aligned with wafer surface defect budgets. The electronic grade is therefore controlled for ionic and particulate species that cause killer defects in gate oxide, interconnect, and photomask cleaning.
In ion chromatography, the sample is evaporated at low temperature and reconstituted in ultrapure water to concentrate chloride and sulfate by a factor of 10. Detection limits below 0.02 mg/kg are achievable for chloride and sulfate. ICP-MS analysis uses a PFA nebulizer and a clean-room prep hood to avoid environmental sodium and calcium contamination. The particle counter is fitted with a 0.45 µm prefilter on the sample line to remove bulk particles before the sensor, but the method is configured to count particles in the fluid as delivered, not after additional filtration. This distinction between package release and point-of-use is important: a clean bulk lot can be degraded by the dispense line if filters or tubing are contaminated.
Because water absorption in 99.9% IPA is an equilibrium-controlled process, the material is dispensed under dry nitrogen to prevent moisture uptake from ambient air. The product is filled under a nitrogen blanket and sealed with a fluoropolymer-lined closure. At the point of use, a pressure-dispense system with a 0.05 µm PTFE filter is recommended to maintain particle counts at ≤25 particles/mL for particles ≥0.5 µm. The density at 25 °C is 0.785–0.786 g/mL, and the viscosity at 20 °C is approximately 2.4 mPa·s. These properties allow penetration into fine stencil apertures and high-aspect-ratio wafer structures but also require that the fluid be stored below its flash point of 12 °C and away from ignition sources. Ultrasonic cleaning at 40 kHz and 25 °C to 35 °C is used for stencil apertures down to 0.15 mm; published data for this specific configuration is limited.
Storage-induced contamination in fluoropolymer packaging is minimized by using FEP or PFA contact surfaces, but the headspace closure remains the principal ingress route for water and volatile contaminants. In high-humidity transfer areas, repeated opening of a 4 L bottle at 25 °C and 60% relative humidity can raise water content from 80 mg/kg to 140 mg/kg in 30 min; the exact rate depends on the surface-area-to-volume ratio and air exchange rate, and published data for this specific configuration is limited. The mechanism is driven by the partial-pressure difference between ambient water vapor and the equilibrium vapor over dry IPA. As a consequence, a dry nitrogen blanket at 0.2 bar overpressure is used for bulk dispensing, and the container is resealed immediately after transfer. High-density polyethylene liners are not used for sub-10 nm wafer fabrication because gradual leaching of low-molecular-weight organics and metals from polyethylene exceeds the nonvolatile residue budget.
Vapor-phase IPA drying uses heated IPA vapor at wafer temperatures between 50 °C and 70 °C; water removal occurs by surface-tension-gradient-driven flow across the wafer surface. This application is sensitive to water content because the vapor-liquid equilibrium of IPA-water mixtures shifts the drying flux; a water concentration above 1000 mg/kg in the liquid inventory can cause visible watermarking on patterned silicon oxide surfaces. The product must not be blended with strong oxidizers, organic peroxides, or acid anhydrides due to exothermic reactions and peroxide formation. In open heated baths, local exhaust ventilation and bonding/grounding are required because the vapor can form flammable mixtures with air between 2% and 12% by volume. The material is not a sterilant and does not meet USP 797 aseptic compounding requirements; it is not intended for injection, wound irrigation, or other pharmaceutical uses.
| Control attribute | 99.9% electronic grade | Technical/IPA 99% | USP/pharmacopeial |
|---|---|---|---|
| Water | ≤100 mg/kg | not controlled for wafer specifications | not consistently specified for semiconductor use |
| Nonvolatile residue | ≤5 mg/kg | may exceed 10 mg/kg | monograph residue limit not particle-controlled |
| Trace metals | ≤10 µg/kg per element | not specified | not specified as trace metals for wafer surfaces |
| Particles, ≥0.5 µm | ≤25 particles/mL | unspecified | unspecified |
| Chloride | ≤0.1 mg/kg | not specified | not specified |
When 99.9% electronic grade IPA substitutes for technical-grade IPA in PCB stencil cleaning and defluxing, the measurable benefit is not simply higher assay but lower ionic residues left after evaporation. In a spray-under-wash stencil cleaner operating at 35 °C and 40 kHz ultrasonic cavitation, the electronic grade leaves a chloride and sulfate residue below the detection limit of ion chromatography after surface extraction; technical grades can leave visible white residues at aperture edges. Surface ionic cleanliness is verified by solvent extract resistivity per IPC TM-650 2.3.25. The chloride ceiling of ≤0.1 mg/kg is relevant for electrochemical migration failures on fine-pitch assemblies with conductor spacing below 0.4 mm. However, the product is not an engineered defluxing solvent for heavily cross-linked no-clean flux residues. It will soften uncured or partially cured flux but will not fully remove polymerized no-clean residues without elevated temperature and mechanical impingement; process qualification on the actual soldering paste and reflow profile is required. It is also not a replacement for aqueous saponifier chemistry when ionic flux activators require neutralization. For stencil cleaning, the material is applied by enclosed spray, by vacuum-assisted under-wash, or by manual wipe in a vented hood. Wipe cloths must be low-lint polyester or knitted nylon; paper-based wipes introduce particles and are excluded from the cleaning sequence. The flash point of 12 °C requires that all stencil cleaning equipment be interlocked with exhaust flow monitoring and IPA-rated fire suppression.
In electronic cleaning, 70% IPA-water blends are used as disinfectants and general cleaning agents, but their high water content causes slower evaporation and can redistribute ionic contamination rather than leave a dry surface. The 99.9% electronic grade evaporates quickly, leaves no conductive residue if the water and nonvolatile residue limits are maintained, and is compatible with hydrophobic wafer surfaces. However, rapid evaporation also means that the material must be used in a closed process or with adequate ventilation; open bench wipes dry before fully dissolving heavy organic residues if repeated application is not used. The product is not intended to meet FDA 21 CFR 173.385 or USP 797 aseptic compounding requirements.
Particle count drift at point-of-use is dominated by dispense metallurgy and filter bypass. In pressure dispense, particle counts can increase downstream of the final filter if the dispense tip or line is made of unpassivated stainless steel, silicone elastomer, or plasticized PTFE. To maintain the specified particle budget of ≤25 particles/mL at ≥0.5 µm, all wetted surfaces after the 0.05 µm filter should be fluoropolymer or electropolished stainless steel with a Ra ≤0.25 µm surface finish. The dispense tooling is cleaned with electronic-grade IPA after aqueous hydrogen peroxide-based cleaning and dried with filtered nitrogen. Point-of-use sampling from the dispense tip is performed with a laser particle counter calibrated to NIST-traceable polystyrene latex spheres. If the particle counter reading exceeds the control limit at the tip but the filter housing effluent is within specification, the cause is typically downstream contamination rather than bulk IPA quality. Assemblies with plasticized elastomers, nickel-plated brass fittings, or unpassivated stainless steel are not compatible with the ≤25 particles/mL particle budget and must be replaced before process qualification.