Products
| HS Code | 516885 |
| Product Name | 99% Isopropyl Alcohol (IPA), Semi-Conductor Grade |
| Chemical Name | Isopropanol (Propan-2-ol) |
| Cas Number | 67-63-0 |
| Molecular Formula | C3H8O |
| Molecular Weight | 60.10 g/mol |
| Purity | 99.0% minimum |
| Grade | Semi-Conductor Grade |
| Appearance | Clear colorless liquid |
| Odor | Characteristic alcohol odor |
| Boiling Point | 82.5°C |
| Melting Point | -89.5°C |
| Flash Point | 11.7°C (closed cup) |
| Autoignition Temperature | 399°C |
| Density | 0.785 g/mL at 25°C |
| Specific Gravity | 0.786 at 20°C |
| Refractive Index | 1.377 at 20°C |
| Viscosity | 2.0 mPa·s at 25°C |
| Solubility | Miscible with water and most organic solvents |
| Water Content | 0.2% maximum |
| Evaporation Residue | Semi-conductor grade low residue |
| Electrical Conductivity | Low conductivity, purified for electronic use |
| Uv Cut Off | 200 nm |
| Vapor Pressure | 5.3 kPa at 20°C |
| Surface Tension | 21.7 dyn/cm at 25°C |
| Heat Of Vaporization | 44.0 kJ/mol |
As an accredited 99% Isopropyl Alcohol (IPA), Semi-Conductor Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Supplied in a 4-liter high-density polyethylene jerrican with tamper-evident seal, nitrogen-purged for semiconductor-grade purity and safe handling. |
| Container Loading (20′ FCL) | Loading 99% semi-conductor grade IPA into 20′ FCL: secure drums/IBCs, clean, dry container, proper segregation, labeling, and ventilation. |
| Shipping | Ships as a flammable liquid (UN1219, Class 3, PG II) via authorized ground transport only. Packaged in sealed, certified containers to preserve semi-conductor purity, with proper hazmat labeling, segregation from oxidizers, and upright securement. Documentation and DOT/IATA compliance required. |
| Storage | Store in tightly sealed, approved containers in a cool, dry, well-ventilated area away from ignition sources, direct sunlight, and incompatible oxidizers. Use grounded containers and anti-static precautions for transfer. Maintain temperatures below 40°C. Keep away from acids and peroxides. Inspect containers regularly for damage or leaks. |
| Shelf Life | Shelf life is typically three years when stored unopened in the original container, away from heat, ignition sources, and moisture. |
In a post-chemical mechanical planarization cleaning line, the vapor dryer is charged with neat 99% semiconductor-grade isopropyl alcohol. The liquid bath is held at 60–70 °C. Nitrogen carrier gas is filtered through a 0.1 µm PTFE membrane and introduced at 15–50 L/min. The saturated gas stream contacts the wetted wafer surface during vertical withdrawal at 1–2 mm/s. The surface tension differential between water at 72.8 mN/m and IPA at 21.7 mN/m at 25 °C generates a Marangoni film that pulls residual ultrapure water away from pattern trenches. The dryer tank is vented at 0.5 m/s face velocity to maintain lower flammability limit control. Water content in the IPA bath is kept below 0.1 wt% by Karl Fischer titration per ASTM E203. Bath replacement is scheduled every 8–12 h in volume fabs because absorbed rinse water collapses the Marangoni differential. End-product inspection is performed on a dark-field wafer surface analyzer with a detection threshold of 0.09 µm. Typical acceptance is no more than 20 particle adders per 300 mm wafer. The terminal product is a dry, patterned silicon wafer with no residual water droplet above the inspection threshold and no corrosion cells on copper interconnect structures.
The process window is narrow. Withdrawal speed above 2 mm/s can outrun the Marangoni film over high-aspect-ratio via arrays. The failure signature is a water meniscus that remains in via bases after the wafer exits the dryer. The corrective response is to reduce IPA vapor flow to 20–30 L/min and lower the bath temperature to 60 °C. If the bath contains more than 0.1 wt% water, the film front becomes unstable and microdroplet carry-over increases. Oxygen concentration inside the dryer is monitored with a high alarm at 4.0%. Each lot is qualified with a split-wafer particle check before full production release.
| Parameter | Test method | Semiconductor-grade control limit |
|---|---|---|
| Assay | GC-FID internal method | ≥99.0% minimum; semiconductor shipments commonly ≥99.9% |
| Water | ASTM E203 | ≤0.1 wt% |
| Residue after evaporation | ASTM D1353 | ≤10 ppm |
| Chloride | ASTM D512 | ≤0.2 ppm |
| Sulfate | ASTM D516 | ≤0.3 ppm |
| Acidity | ASTM D1613 | ≤0.0005 meq/g |
| Metals by ICP-MS | SEMI C19 | ≤1 ppb per element for critical metals |
Before pellicle mounting, mask shops dispense neat 99% isopropyl alcohol for final reticle cleaning. The solvent is filtered through a 0.05 µm point-of-use filter at 22±2 °C. Relative humidity is controlled at 45±5% because condensation on quartz masks shifts the evaporation endpoint. A typical preparation bath uses 100% IPA without dilution. The reticle is immersed for 90–120 s, withdrawn at 1.0 mm/s, and blow-dried with 0.2 µm-filtered nitrogen at 1.5 bar. Evaporation time is limited by the vapor pressure of IPA and the mask pattern aspect ratio. At narrow linewidths below 65 nm, capillary force retention in assist features may extend drying time by 20–30% compared with unpatterned quartz. The controlling parameter is not solvent purity alone. Dissolved non-volatile residue must remain below 10 ppm per ASTM D1353. Chloride is controlled below 0.2 ppm per ASTM D512 to avoid haze formation. Sulfate is limited below 0.3 ppm per ASTM D516. The terminal product is a 6-inch DUV reticle with no stain, haze, or pellicle adhesive void larger than 0.5 µm under high-intensity inspection.
On a spin coater configured for edge bead removal, a point-of-use IPA line delivers 99% semiconductor-grade solvent to the wafer edge and backside. The edge bead removal step uses neat IPA, not an aqueous blend. The dispense volume is 5–10 mL per 200 mm wafer and 10–15 mL per 300 mm wafer. The coater runs a two-stage program. The first stage holds 500–1200 rpm for 5–10 s to dissolve photoresist from the exclusion zone. The second stage accelerates to 2500–3500 rpm for 10–15 s to expel the solvent film. The solvent dissolves positive-tone acrylate and methacrylate resists before development. The process clears a belt of 2–3 mm at the wafer edge. Point-of-use filtration is set at 0.05 µm to prevent coater chuck and bowl contamination. Solvent temperature is maintained at 23±2 °C because the evaporation rate at the spin bowl affects edge film thickness uniformity. The solvent is qualified to SEMI C19 limits for critical trace metals. The terminal product is a coated wafer with a clean edge exclusion ring, no bevel deposits, and no backside flaking in subsequent track steps.
For plasma etch chamber components made from quartz, silicon carbide, and PFA, a ventilated ultrasonic cleaning tank is used. A 80:20 IPA/ultrapure water mixture is prepared at 25–40 °C. The ultrasonic frequency is 40 kHz; power density is set at 10–15 W/L. The tank includes a 0.1 µm recirculating filter and an explosion-rated exhaust with 0.5 m/s capture velocity. Parts are immersed for 10–20 min. They are then transferred to a neat 99% IPA rinse vessel. Rinsing is followed by nitrogen blow-down at 1.0–1.5 bar using 0.2 µm filtered gas. The process removes fluoropolymer dust, ceramic particles, and light organic film from plasma-facing surfaces. Surface cleanliness is verified by TXRF. Acceptance is typically below 1×1010 atoms/cm² for iron, copper, and zinc. The solvent ratio is not enriched beyond 80:20 for extended ultrasonic cleaning because the vapor flammability margin narrows. The terminal product is a vacuum-compatible chamber part free of wipe-borne fibers and non-volatile hydrocarbon residue.
After detergent stripping, front-opening unified pods (FOUPs) and 300 mm wafer cassettes are processed in a closed-loop cleaning system. The intermediate rinse stage uses a 50:50 IPA/ultrapure water blend at 40 °C. The wash time is 5 min with a spray pressure of 2.5 bar. A final rinse uses neat 99% IPA at 25 °C for 30 s. The system is fitted with 0.1 µm point-of-use filters on both fluid lines. The solvency of IPA removes residual detergent and reduces drying time inside narrow slot features. The FOUP is dried with HEPA-filtered air at 0.3 m/s velocity. Cleanliness verification is performed in an ISO 14644-1:2015 Class 4 environment. Particle release is measured by liquid particle count. Typical acceptance is no more than 50 particles per 0.5 L extraction for particles ≥0.1 µm. The terminal product is a clean FOUP or cassette returned to the wafer logistics loop without solvent carry-over.
During lithography track preventive maintenance, 99% semiconductor-grade IPA is used to remove photoresist deposits from coater bowls, drip pans, and drain lines. Manual wipe cleaning uses 100% IPA at 25 °C. The drain-line flush uses a 70:30 IPA/ultrapure water blend at 1.0 L/min for 10 min. The fluid is introduced through a 0.1 µm point-of-use filter to avoid particle deposition in the coater module. The procedure is performed during track preventive maintenance windows or after resist spills. Use of semiconductor-grade IPA rather than technical IPA avoids introduction of trace metals into the lithography environment. The solvent dissolves edge bead, dispense nozzle, and coater cup residues without damaging polypropylene drain components. The terminal product is a restored coater bowl with no polymer crust, no solvent odor, and no flow restriction in the drain path.
Competitive 99% Isopropyl Alcohol (IPA), Semi-Conductor Grade prices that fit your budget—flexible terms and customized quotes for every order.
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99% Isopropyl Alcohol (IPA), Semi-Conductor Grade (CAS 67-63-0, UN 1219) is a low-residue, low-metal solvent supplied for direct use in wafer cleaning, rinsing, and drying. The product is a clear, colorless liquid with a density of 0.785 g/cm³ at 20 °C, a normal boiling point of 82.5 °C, a closed-cup flash point of 11.7 °C, an autoignition temperature of 399 °C, and a vapor pressure of approximately 4.4 kPa at 20 °C. Commercial packaging commonly includes 20 L fluorinated high-density polyethylene containers, 200 L drums, and 55-gallon stainless steel totes; point-of-use packaging may use bag-in-can or bag-in-drum systems. The product is typically filled under nitrogen after recirculation through 0.1 µm membrane cartridges. Representative lot-release parameters include assay ≥99.0 % by gas chromatography with flame ionization detection, water ≤0.5 % for standard semiconductor lots, water ≤0.1 % for low-water drying grades by ASTM E203, nonvolatile residue ≤5 ppm by ASTM D1353, and acidity ≤0.001 meq/g by ASTM D1613. Product codes are distributor-specific; the semiconductor-grade designation is warranted by the certificate of analysis, not by a universal model number.
Water concentration is a batch-release threshold because isopropanol and water form a minimum-boiling azeotrope at approximately 87.7 wt% IPA and 80.4 °C at 101.3 kPa. Production of 99.0 % IPA from pre-concentrated feed therefore requires pressure-swing distillation, molecular sieve dehydration, or membrane separation rather than simple rectification. In Marangoni drying on single-wafer tools, the solvent is introduced at the air-liquid meniscus to create a surface tension gradient. Residual water in the IPA reduces that gradient and can produce watermarks or dry-spot defects on 300 mm substrates. Process engineers therefore specify water by Karl Fischer coulometric titration; standard semi-conductor lots may carry an upper limit of 0.5 %, while low-water drying grades are controlled to 0.1 % or lower. The direct relationship between water content and defectivity is tool-specific, and published data for specific production configurations is limited; patterned wafer inspection and unpatterned surface scan remain the controlling qualification methods.
In high-volume logic and memory fabs, single-wafer cleaning tools use point-of-use filtration and temperature control at 20 °C to 25 °C. Viscosity at 25 °C is 2.04 mPa·s and surface tension at 20 °C is approximately 21.7 mN/m, both lower than water. These properties enable rapid dewetting of patterned features with high aspect ratio. Some vapor-dry configurations use nitrogen carrier gas and IPA vapor at 60 °C to 80 °C; exhaust is routed to thermal oxidation or activated carbon. Dilution with ultrapure water is sometimes performed at 70:30 or 80:20 IPA:UPW ratios for specific cleaning chemistries, but dilution reduces the drying driving force and must be revalidated for pattern density and feature geometry.
Trace-metal sample preparation is performed in an ISO 14644-1 Class 5 hood. The IPA is evaporated gently under filtered nitrogen at 40 °C to 50 °C, and the residue is reconstituted in 2% ultrapure nitric acid. This preconcentration step allows inductively coupled plasma mass spectrometry to achieve solution detection limits below 0.01 ppb, corresponding to sub-ppb detection in the original solvent. Without this step, direct aspiration of IPA destabilizes the plasma and produces false high readings from solvent carbon. Analytical data generated by direct injection of organic solvent without matrix removal is therefore not equivalent to a semiconductor-grade certificate.
Trace-metal control is enforced by inductively coupled plasma mass spectrometry after evaporative concentration. Semiconductor-grade IPA differs from ACS reagent-grade material mainly in the requirement that sodium, potassium, calcium, iron, and aluminum be reported at low-ppb levels; supplier data sheets often list individual metals at ≤10 ppb and total metals below 50 ppb. Sodium and potassium are critical because they diffuse rapidly in silicon dioxide and shift threshold voltage stability; iron and copper are controlled because they introduce mid-gap recombination centers in silicon. Transfer piping and wetted components should be electropolished 316L stainless steel, PTFE, or PFA. Carbon steel fittings, bronze pumps, and unlined rubber hoses are avoided because they contribute metal and organic extractables. Particle counts are measured by laser light-scattering particle counters. A representative semiconductor specification may require ≤10 particles/mL at ≥0.2 µm and ≤1 particle/mL at ≥0.5 µm; these values are not universal and must be read against the specified test method and sampling container cleanliness level.
| Parameter | Control limit | Test method | Units |
|---|---|---|---|
| Assay as IPA | ≥99.0 | Gas chromatography with FID | wt% |
| Water | ≤0.5 standard; ≤0.1 low-water | ASTM E203 Karl Fischer | wt% |
| Residue after evaporation | ≤5 | ASTM D1353 | ppm |
| Acidity as acetic acid | ≤0.001 | ASTM D1613 | meq/g |
| Chloride | ≤0.2 | Ion chromatography | ppm |
| Sodium + potassium | ≤10 total | ICP-MS after concentration | ppb |
| Particles ≥0.2 µm | ≤10 | Laser particle counter | particles/mL |
Certificate-of-analysis review should verify method, not only conformance. A lot reported as 99.1 % by GC may still be unsuitable for front-end use if water, metal, and particle data are absent. The nonvolatile residue method should be gravimetric after solvent evaporation at 105 °C to 110 °C, because low-volatility plasticizer or pump-oil residues are not captured by water Karl Fischer or assay. In production-scale supply chains, water ingress through HDPE drum closures and outdoor storage has been observed to raise water content from 0.1 % to 0.4 % over a six-month interval, but published data for specific closure designs is limited. Sealed drum ball-valves and nitrogen blanketing are therefore standard receiving and storage controls.
ACS reagent-grade isopropanol may have a higher assay specification, such as ≥99.5 %, but its certificate of analysis rarely contains the trace-metal and particle reporting required for front-end processes. USP/NF-grade IPA is intended for pharmaceutical manufacturing and permits nonvolatile residue limits around 50 ppm; it is not tested for device-specific metal contamination or particle counts. Industrial-grade IPA can contain several thousand ppm of water and nonvolatile residue above 20 ppm, with no lot-level metal reporting. Substitution of these grades in wafer processing transfers uncontrolled residues to the wafer surface and can affect gate oxide integrity, contact resistance, and lithography defect density. Semiconductor-grade solvent is also tested for chloride at ≤0.2 ppm, sulfate at ≤0.2 ppm, and acidity at ≤0.001 meq/g. The certificate should list actual numerical results, not only a conformance statement. Where relevant, the product may be ordered against SEMI C21, but not all suppliers publish SEMI C21 Grade designations; the certificate of analysis remains the controlling document.
| Grade | Assay | Water | Residue | Metals | Application boundary |
|---|---|---|---|---|---|
| 99% Semi-Conductor | ≥99.0 % | ≤0.5 % or ≤0.1 % | ≤5 ppm | Trace metals controlled per lot | Wafer drying, optics cleaning, CVD chamber parts |
| ACS reagent | ≥99.5 % | ≤0.2 % | ≤5 ppm | Heavy metals 0.1 ppm, not semiconductor-specific | Analytical dilutions, laboratory glassware |
| USP/NF | 99.0–101.0 % | ≤0.5 % | ≤50 ppm | No particle or device-specific metal limits | Pharmaceutical manufacturing and hand sanitizers |
| Industrial | ≥95.0 % | Not controlled | ≤20 ppm typical | Not controlled | General degreasing, paints, printing |
Front-end usage includes spray rinsing after SC1/SC2 cleans, Marangoni drying, and wipe cleaning of electrostatic chucks, wafer cassettes, and lithography surfaces. In Marangoni drying, the low surface tension of IPA at 21.7 mN/m creates a meniscus gradient that pulls ultrapure water from the wafer surface. The process window is narrow, and tool engineers typically maintain solvent temperature between 20 °C and 25 °C. Some single-wafer tools use heated N₂/IPA vapor mixtures at 60 °C to 80 °C; the upper bound is constrained by the flash point and by solvent recovery efficiency. The base solvent specification is often cross-referenced to ASTM D770, but semiconductor use imposes additional metal and particle tests beyond that standard. Published data for specific dilution ratios in production tools is limited, so process qualification by patterned wafer inspection remains required.
Storage and handling boundaries follow flammable-liquid practice under NFPA 30 and FM Global guidelines. Flash point 11.7 °C closed cup and lower flammable limit 2.0 vol% require electrically bonded transfer lines, explosion-proof dispensing pumps, and local exhaust ventilation. The solvent is incompatible with strong oxidizers, including concentrated nitric acid, sodium hypochlorite, and peroxides; formation of acetone and peroxide under long-term oxygen exposure is suppressed by nitrogen blanketing but not eliminated without antioxidant addition. Wetted materials should be limited to 316L stainless steel, PTFE, PFA, and high-density polyethylene; natural rubber and some EPDM elastomers swell and release extractables. Aluminum transfer fittings are avoided where water is present because alkaline pH and chloride contamination may promote pitting. These boundaries are drawn from standard chemical compatibility tables and solvent storage practice, not from product-specific marketing claims.